Dopant imaging of power semiconductor device cross sections

Imaging "invisible" dopant atoms in semiconductor nanocrystals.

Nanometer-scale semiconductors that contain a few intentionally added impurity atoms can provide new opportunities for controlling electronic properties. However, since the physics of these materials depends strongly on the exact arrangement of the impurities, or dopants, inside the structure, and many impurities of interest cannot be observed with currently available imaging techniques, new me...

Power Corrections in Eikonal Cross Sections

We discuss power corrections associated with the infrared behavior of the perturbative running coupling in the eikonal approximation to Drell-Yan and other annihilation cross sections in hadron-hadron scattering. General properties of the eikonal approximation imply that only even powers of the energy scale are necessary.

Single Dopant Diffusion in Semiconductor Technology

Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range

Evaluation techniques for semiconductor devices are keys for device development with low cost and short period. Especially, dopant and depletion layer distribution in device is critical for electrical property of the device and is needed to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We devel...

Parallel Semiconductor Device Simulation: from Power to ‘Atomistic’ Devices

This paper discusses various aspects of the parallel simulation of semiconductor devices on mesh connected MIMD platforms with distributed memory and a message passing programming paradigm. We describe the spatial domain decomposition approach adopted in the simulation of various devices, the generation of structured topologically rectangular 2D and 3D finite element grids and the optimisation ...